Image shown is for reference only. Detailed specifications should be obtained from the data sheet.
$5.06
8511 in stock
| Category | |
|---|---|
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ C7 |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 5.7A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 290µA |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1150 pF @ 400 V |
| FET Feature | – |
| Power Dissipation (Max) | 72W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO247-3 |
| Package / Case | TO-247-3 |
| Base Product Number | IPW65R190 |
| Datasheets | IPW65R190C7 |
| Other Related Documents | Part Number Guide |
| Featured Product | Data Processing Systems |
| HTML Datasheet | IPW65R190C7 |
| Simulation Models | CoolMOS™ Power MOSFET 650V C7 Spice Model |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
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