Image shown is for reference only. Detailed specifications should be obtained from the data sheet.
$1.81
19829 in stock
| Category | |
|---|---|
| Manufacturer | Infineon Technologies |
| Series | Automotive, OptiMOS™-P2 |
| Product Status | Not For New Designs |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.6mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 85µA |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 10 V |
| Vgs (Max) | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | 3900 pF @ 25 V |
| FET Feature | – |
| Power Dissipation (Max) | 58W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3-313 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Base Product Number | IPD50P04 |
| Datasheets | IPD50P04P4L-11 |
| Other Related Documents | Part Number Guide |
| Featured Product | Data Processing Systems |
| EDA Models | IPD50P04P4L-11 by SnapEDA |
| Simulation Models | OptiMOS-P2-Spice Model |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
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