Image shown is for reference only. Detailed specifications should be obtained from the data sheet.
$3.33
8574 in stock
| Category | |
|---|---|
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.1mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 93µA |
| Gate Charge (Qg) (Max) @ Vgs | 79 nC @ 4.5 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 13000 pF @ 30 V |
| FET Feature | – |
| Power Dissipation (Max) | 167W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Base Product Number | IPD031 |
| Datasheets | IPD031N06L3 G |
| Other Related Documents | Part Number Guide |
| Featured Product | Data Processing Systems |
| HTML Datasheet | IPD031N06L3 G |
| Simulation Models | MOSFET OptiMOS™ 60V N-Channel Spice Model |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
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