BSC042NE7NS3GATMA1

Discrete Semiconductor Products  Infineon Technologies BSC042NE7NS3GATMA1

Image shown is for reference only. Detailed specifications should be obtained from the data sheet.

Part Number
BSC042NE7NS3GATMA1
Price

$3.37

Description
MOSFET N-CH 75V 19A/100A TDSON
Manufacturer

Infineon Technologies

Quantity

7806 in stock

Product Details

Discrete Semiconductor Products Infineon Technologies BSC042NE7NS3GATMA1

Category

Manufacturer

Infineon Technologies

Series

OptiMOS™

Product Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Current - Continuous Drain (Id) @ 25°C

19A (Ta), 100A (Tc)

Rds On (Max) @ Id, Vgs

4.2mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

3.8V @ 91µA

Gate Charge (Qg) (Max) @ Vgs

69 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4800 pF @ 37.5 V

FET Feature

Power Dissipation (Max)

2.5W (Ta), 125W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TDSON-8-1

Package / Case

8-PowerTDFN

Base Product Number

BSC042

Datasheets

BSC042NE7NS3 G

HTML Datasheet

BSC042NE7NS3 G

Simulation Models

MOSFET OptiMOS™ 75V N-Channel Spice Model

RoHS Status

ROHS3 Compliant

Moisture Sensitivity Level (MSL)

1 (Unlimited)

REACH Status

REACH Unaffected

ECCN

EAR99

HTSUS

8541.29.0095